? semiconductor components industries, llc, 2016 may, 2016 ? rev. 6 1 publication order number: ntljs3113p/d ntljs3113p power mosfet ? 20 v, ? 7.7 a, single p ? channel, 2x2 mm, wdfn package features ? recommended replacement device ? ntlus3a40p ? wdfn package provides exposed drain pad for excellent thermal conduction ? 2x2 mm footprint same as sc ? 88 package ? lowest r ds(on) solution in 2x2 mm package ? 1.5 v r ds(on) rating for operation at low voltage logic level gate drive ? low profile (< 0.8 mm) for easy fit in thin environments ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? dc ? dc converters (buck and boost circuits) ? optimized for battery and load management applications in portable equipment such as, cell phones, pda?s, media players, etc. ? high side load switch maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ? 5.8 a t a = 85 c ? 4.4 t 5 s t a = 25 c ? 7.7 power dissipation (note 1) steady state t a = 25 c p d 1.9 w t 5 s 3.3 continuous drain current (note 2) steady state t a = 25 c i d ? 3.5 a t a = 85 c ? 2.5 power dissipation (note 2) t a = 25 c p d 0.7 w pulsed drain current t p = 10 s i dm ? 23 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s ? 2.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size, (30 mm 2 , 2 oz cu). www. onsemi.com ? 20 v 50 m @ ? 2.5 v 40 m @ ? 4.5 v r ds(on) max ? 7.7 a i d max (note 1) v (br)dss 75 m @ ? 1.8 v 200 m @ ? 1.5 v g s p ? channel mosfet d j8 = specific device code m = date code = pb ? free package (note: microdot may be in either location) j8m 1 2 3 6 5 4 wdfn6 case 506ap marking diagram device package shipping ? ordering information NTLJS3113PT1G wdfn6 (pb ? free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 2 3 6 5 4 d d g d d s (top view) pin connections d s s d pin 1 ntljs3113ptag
ntljs3113p www. onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 65 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 38 junction ? to ? ambient ? steady state min pad (note 4) r ja 180 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size (30 mm 2 , 2 oz cu). mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = ? 250 a, ref to 25 c ? 10.1 mv/ c zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v t j = 25 c ? 1.0 a t j = 85 c ? 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 1.0 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.45 ? 0.67 ? 1.0 v negative gate threshold temperature coefficient v gs(th) /t j 2.68 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = ? 4.5, i d = ? 3.0 a 32 40 m v gs = ? 2.5, i d = ? 3.0 a 44 50 v gs = ? 1.8, i d = ? 2.0 a 67 75 v gs = ? 1.5, i d = ? 1.8 a 90 200 forward transconductance g fs v ds = ? 16 v, i d = ? 3.0 a 5.9 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 16 v 1329 pf output capacitance c oss 213 reverse transfer capacitance c rss 120 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 16 v, i d = ? 3.0 a 13 15.7 nc threshold gate charge q g(th) 1.5 gate ? to ? source charge q gs 2.2 gate ? to ? drain charge q gd 2.9 gate resistance r g 14.4 switching characteristics (note 6) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 3.0 a, r g = 3.0 6.9 ns rise time t r 17.5 turn ? off delay time t d(off) 60 fall time t f 56.5 drain ? source diode characteristics forward recovery voltage v sd v gs = 0 v, is = ? 1.0 a t j = 25 c ? 0.78 ? 1.2 v t j = 125 c ? 0.67 reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ? 1.0 a 70.8 106 ns charge time t a 14.3 discharge time t b 56.4 reverse recovery time q rr 44 nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntljs3113p www. onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 1 0.05 3 2 0.03 0.01 0.08 47 1.3 1.5 1.1 0.9 0.7 10000 06 2 1 ? v ds , drain ? to ? source voltage (volts) ? i d , drain current (amps) 0 ? v gs , gate ? to ? source voltage (volts) figure 1. on ? region characteristics figure 2. transfer characteristics ? i d , drain current (amps) 1.0 2.0 1.5 0.02 3.0 figure 3. on ? resistance versus drain current ? i d , drain current (amps) figure 4. on ? resistance versus drain current and gate voltage ? i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 5. on ? resistance variation with temperature t j , junction temperature ( c) figure 6. drain ? to ? source leakage current versus voltage ? v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) ? i dss , leakage (na) 7 ? 50 50 25 0 ? 25 75 125 100 1 212 10 4 3 1 2 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c v gs = ? 1.8 v v gs = 0 v i d = ? 6 a v gs = ? 4.5 v 3 0.04 t j = 100 c t j = 150 c 2 0 9 1.5 t j = 25 c 20 v gs = ? 1.7 v to ? 8 v ? 1.5 v 3 1000 4 4 0 4 0.03 0.02 t j = 25 c 150 10 100000 2.5 ? 1.4 v ? 1.3 v ? 1.2 v t j = 25 c v gs = ? 4.5 v t j = ? 55 c t j = 100 c 0.04 v gs = ? 4.5 v v gs = ? 2.5 v 6 8 14 16 18 2 0.5 2.5 5 5 6 5 6 ? 1.6 v ? 1.1 v 8 1 3 5 7 0.07 0.06 6 100
ntljs3113p www. onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 5 5 15 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 1600 0 v gs v ds 2000 800 010 v ds = v gs = 0 v t j = 25 c c oss c rss 2400 2800 c iss figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge figure 9. resistive switching time variation versus gate resistance r g , gate resistance (ohms) 1 10 100 1000 1 t, time (ns) 100 t r t d(off) t d(on) t f 10 v dd = ? 15 v i d = ? 3.0 a v gs = ? 4.5 v 2.5 0 0 ? v sd , source ? to ? drain voltage (volts) v gs = 0 v figure 10. diode forward voltage versus current 1.0 1 0.6 2 figure 11. maximum rated forward biased safe operating area 0.1 1 100 ? v ds , drain ? to ? source voltage (volts) 1 100 r ds(on) limit thermal limit package limit 10 10 see note 2, page 1 single pulse t c = 25 c 1 ms 100 s 10 ms dc t j = 25 c 0.1 0.01 -v gs , gate-to-source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 48 i d = ? 3.0 a t j = 25 c v gs q gs q gd qt 2 1 12 8 0 20 12 4 -v ds , drain-to-source voltage (volts) v ds 16 3 0.8 0.4 0.2 ? i d , drain current (amps) ? i s , source current (amps) 1200 400 1.5 0.5 t j = 150 c
ntljs3113p www. onsemi.com 5 typical performance curves (t j = 25 c unless otherwise noted) figure 12. thermal response t, time (sec) 1 1000 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 100 1000 10 0.1 0.001 0.0001 0.000001 0.1 100 10 1 0.01 0.00001 effective transient thermal resistance see note 2 on page 1
ntljs3113p www. onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. center terminal lead is optional. terminal lead is connected to terminal lead # 4. 6. pins 1, 2, 5 and 6 are tied to the flag. c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c wdfn6 2x2 case 506ap issue b dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 b1 0.65 ref d d2 e e2 0.27 ref e 0.15 ref k l pin one reference 0.08 c 0.10 c 7x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 0.05 c 4x j j1 a 0.10 c b1 b 6x 0.05 c l2 note 5 l2 j j1 0.51 0.61 2.00 bsc 1.00 1.20 2.00 bsc 1.10 1.30 0.65 bsc 0.20 0.30 0.20 0.30 bottom view 2.30 6x pitch 1 1.25 0.60 0.35 0.65 0.66 6x 0.43 dimensions: millimeters 1.10 0.35 0.34 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntljs3113p/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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